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IRGPH50MD2
90% Vge +Vge Same type device as D.U.T. Vce
80% of Vce
430F D.U.T.
Ic
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off) , tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr =
trr id dt tx
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on) , tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following: Appendix H: Section D - page D-10 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC
C-488
Section D - page D-13
IRGPH50MD2
300 40
VR = 200V TJ = 125C TJ = 25C
30 200
VR = 200V TJ = 125C TJ = 25C
I F = 16A I F = 8.0A
I RRM - (A)
trr - (ns)
IF = 32A
20
I F = 32A I F = 16A I F = 8.0A
100 10
0 100
di f /dt - (A/s)
1000
0 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. di f/dt
1200
Fig. 15 - Typical Recovery Current vs. di f/dt
1000
VR = 200V TJ = 125C TJ = 25C
900
VR = 200V TJ = 125C TJ = 25C
600
I F = 16A
di(rec)M/dt - (A/s)
I F = 32A
Q RR - (nC)
100
I F = 32A I F =16A I F = 8.0A
I F = 8.0A
300
0 100
di f /dt - (A/s)
1000
10 100
1000
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. di f/dt
Fig. 17 - Typical di (rec)M/dt vs. di f/dt
C-487
IRGPH50MD2
25 20
I , C olle ctor-to-E m itter C urrent (A )
T otal S w itch ing Losses (m J)
RG TC V CC V GE
=5 = 1 50 C = 9 60 V = 1 5V
1000
VG E E 20 V G= T J = 1 25 C
100
15
S A F E O P E R A T IN G A R E A
10
10
1
5
0 0 10 20 30 40 50
C
0.1 1 10 100 100 0 100 00
I C , C olle ctor-to-Em itter C urren t (A )
VC E , C o llector-to-E m itter V oltag e (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
10
TJ = 150C TJ = 125C TJ = 25C
1 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Voltage Drop - VFM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-486
IRGPH50MD2
4000 20
V G E , G ate-to-E m itter Voltag e (V)
V GE = C ie s = C re s = C o es =
0V, f = 1M Hz C ge + C gc , C ce SHO R TED C gc C ce + C gc
V CE = 4 00 V IC = 23A
16
3000
C , C a pa citan ce (pF )
C oes
2000
12
C ies
8
1000
C res
4
0 1 10 100
0 0 20 40 60 80 100
V C E , C ollector-to-Em itter V oltage (V)
Q G , Total G a te C ha rge (nC )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
6.0
100
Total Switching Losses (mJ)
T o ta l S w itch ing Los ses (m J)
5.8
VCC VGE TC IC
= 960V = 15V = 25C = 23A
RG = 5 V G E = 1 5V V C C = 9 60 V I C = 46 A
5.6
5.4
10
I C = 23 A
5.2
5.0
I C = 11 A
4.8 0 10 20 30 40 50
A
60
1 -60 -4 0 -20 0 20 40 60 80 100 120 140 160
R G , Gate Resistance ()
TC , C a se Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-485
IRGPH50MD2
50
V GE = 1 5V
6.0
V C E , C ollec tor-to-E m itter V oltage (V )
M a xim um D C C ollector Current (A )
5.5 5.0
V G E = 1 5V 8 0 s P U L S E W ID TH
40
I C = 4 6A
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0
30
20
I C = 2 3A
10
I C = 12A
0 25 50 75 100 125 15 0
-60
-40
-20
0
20
40
60
80
100 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem p erature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
1
T herm a l Resp on se (Z thJC )
D = 0 .5 0
0 .2 0
0.1
0 .1 0 0 .0 5 SING L E P U L S E (TH E R M A L R ES P O N S E )
N o te s : 1 . D u ty fa c to r D = t / t 12 2 . P e a k TJ = P D M x Z th J C + T C PD M
t
1
t 2
0 .0 2 0 .0 1
0.01 0.00001
0.0001
0 .001
0.01
0.1
1
10
t 1 , R ectang ular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-484
IRGPH50MD2
25
D u ty c y cle : 5 0 % T J = 1 25 C T s ink = 90 C G a te drive as sp e c ifie d T u rn-o n los s es in c lu de e ffe c ts of re v ers e re co ve ry P o we r Dissip atio n = 4 0W
20
Loa d C u rren t (A )
15
60% of rated v oltage
10
5
0 0.1 1 10 100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
1000
I C , C ollector-to-E m itter C urre nt (A)
25 C
100
IC , C ollector-to-E m itter Cu rrent (A )
100
1 5 0C
1 50 C
2 5C
10
10
1 1
V GE = 15 V 20 s P U L S E W ID T H
10
1 5 10
V C C = 1 0 0V 5 s P U L S E W ID TH
15 20
V C E , C ollector-to-Em itter V oltage (V)
V G E , G a te-to-E m itter V oltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-483
IRGPH50MD2
Electrical Characteristics @ T J = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES /TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A -- 1.1 -- V/C VGE = 0V, IC = 1.0mA -- 2.3 2.9 IC = 23A V GE = 15V -- 3.0 -- V IC = 42A See Fig. 2, 5 -- 2.8 -- IC = 23A, T J = 150C 3.0 -- 5.5 VCE = V GE, IC = 250A -- -13 -- mV/C VCE = V GE, IC = 250A 11 15 -- S VCE = 100V, I C = 23A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 6500 VGE = 0V, V CE =1200V, T J = 150C -- 2.5 3.0 V IC = 16A See Fig. 13 -- 2.1 2.5 IC = 16A, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T J = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Charge Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- 10 Max. Units Conditions 130 IC = 23A 33 nC VCC = 400V 39 See Fig. 8 -- T J = 25C -- ns IC = 23A, V CC = 960V 770 VGE = 15V, R G = 5.0 730 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 17 -- s VCC = 720V, T J = 125C VGE = 15V, R G = 5.0 -- 86 -- T J = 150C, See Fig. 9, 10, 11, 18 -- 130 -- ns IC = 23A, V CC = 960V -- 800 -- VGE = 15V, R G = 5.0 -- 920 -- Energy losses include "tail" and -- 20 -- mJ diode reverse recovery -- 13 -- nH Measured 5mm from package -- 1900 -- VGE = 0V -- 140 -- pF VCC = 30V See Fig. 7 -- 24 -- = 1.0MHz -- 90 135 ns T J = 25C See Fig. -- 164 245 T J = 125C 14 I F = 16A -- 5.8 10 A T J = 25C See Fig. -- 8.3 15 T J = 125C 15 V R = 200V -- 260 675 nC T J = 25C See Fig. -- 680 1838 T J = 125C 16 di/dt = 200A/s -- 120 -- A/s T J = 25C See Fig. -- 76 -- T J = 125C 17 Pulse width 5.0s, VCC=80%(V CES), V GE=20V, L=10H, single shot. R G= 5.0, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Typ. 89 22 26 100 140 510 470 3.0 8.0 11 --
C-482
PD - 9.1047A
IRGPH50MD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast CoPack IGBT
VCES = 1200V VCE(sat) 2.9V
G
@VGE = 15V, I C = 23A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE PD @ T C = 25C PD @ T C = 100C TJ T STG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
1200 42 23 84 84 16 84 10 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- 0.24 -- 6 (0.21)
Max.
0.64 0.83 -- 40 --
Units
C/W
g (oz)
Revision 1
C-481

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